Micron MTA4ATF1G64HZ-3G2E2 8GB PC4-3200 DDR4 SODIMM Notebook [MTA4ATF1G64HZ-3G2E2]

Micron MTA4ATF1G64HZ-3G2E2 Description:

Micron MTA4ATF1G64HZ-3G2E2 8GB PC4-3200 DDR4 SODIMM Notebook

Micron DDR4 SDRAM has new features centered on power savings, performance enhancement, manufacturability, and reliability improvements. These features improve performance, power, manufacturability, reliability and stacking capabilities for the enterprise, cloud, ultrathin, tablet, automotive and embedded markets. DDR4 has data rates up to 3200MT/s, an operating voltage of 1.2V and additional power saving features. Increases performance up to 50% and deliver total energy savings up to 25% compared to DDR3.

 

• DDR4 functionality and operations supported as defined in the component data sheet
• Features and specifications supported in the Micron DDR4 SODIMM Core data sheet
• 260-pin, small-outline dual in-line memory module (SODIMM)
• Fast data transfer rate: PC4-2666, PC4-3200
• 8GB (1 Gig x 64) • Data bus inversion (DBI) for data bus
• Single-rank
• On-board I 2C serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each

 

Parameter	8GB
Row address	128K A[16:0]
Column address	1K A[9:0]
Device bank group address	2 BGO
Device bank address per group	4 BA[1:0]
Device configuration	16Gb (1 Gig x 16), 8 banks
Module rank address	CS0_n

 

Part Number	Module Density	Configuration	Module Bandwith	Memory Clock/Data Rate	Clock Cycles
MTA4ATF1G64HZ-3G2E2	8GB	1 Gig x 64	25.6 GB/s	0.625ns/3200 MT/s	22-22-22