Kingston 4GB 1600MHz DDR3 Non-ECC CL11 SODIMM 1.35V Laptop RAM [KVR16LS11/4]

Kingston KVR16LS11/4 Description:

Kingston 4GB 1600MHz DDR3 Non-ECC CL11 SODIMM 1.35V Laptop RAM

Kingston ValueRAM 512M x 64-bit (4GB), DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•  
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component

CL(IDD)	11 cycles
Row Cycle Time (tRCmin)	48.125ns (min.)
Refresh to Active/Refresh	260ns (min.)
Command Time	(tRFCmin)
Row Active Time (tRASmin)	35ns (min.)
Maximum Operating Power	(1.35V) = 2.376 W
UL Rating	94 V - 0
Operating Temperature	0o C to 85o C
Storage Temperature	-55o C to +100o C

 

 

Compatibility:

ASUS/ASmobile - X Series Notebook X750JA ASUS/ASmobile - X Series Notebook X750JB Clevo - Notebook P150SM Intel - DC3217IYE Next Unit of Computing (NUC) Kit Intel - DC53427HYE Next Unit of Computing (NUC) Kit MSI - Notebook GE40 2OC MSI - Notebook GE60 2OE MSI - Notebook GE70 2OE